(AlxGa1-x)0.5In0.5P/In 0.15Ga0.85As (x=0, 0. 3, 1. 0)...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 12

(AlxGa1-x)0.5In0.5P/In 0.15Ga0.85As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

Shih-Cheng Yang, Hsien-Chin Chiu, Yi-Jen Chan, Hao-Hsiung Lin, Jenn-Ming Kuo
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Volume:
48
Year:
2001
Language:
english
Pages:
5
DOI:
10.1109/16.974726
File:
PDF, 185 KB
english, 2001
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