Electron and hole mobility in silicon at large operating...

IEEE Transactions on Electron Devices 2002 Vol. 49; Iss. 3

Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

Reggiani, S., Valdinoci, M., Colalongo, L., Rudan, M., Baccarani, G., Stricker, A.D., Illien, F., Felber, N., Fichtner, W., Zullino, L.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
49
Year:
2002
Language:
english
Pages:
10
DOI:
10.1109/16.987121
File:
PDF, 228 KB
english, 2002
Conversion to is in progress
Conversion to is failed