A new calculation approach of transistor noise parameters...

IEEE Transactions on Microwave Theory and Techniques 1997 Vol. 45; Iss. 3

A new calculation approach of transistor noise parameters as a function of gatewidth and bias current

Gasmi, A., Huyart, B., Bergeault, E., Jallet, L.P.
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Volume:
45
Year:
1997
Language:
english
Pages:
7
DOI:
10.1109/22.563331
File:
PDF, 308 KB
english, 1997
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