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Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET
Reuter, R., Agethen, M., Auer, U., van Waasen, S., Peters, D., Brockerhoff, W., Tegude, F.-J.Volume:
45
Year:
1997
Language:
english
Pages:
7
DOI:
10.1109/22.588612
File:
PDF, 262 KB
english, 1997