Intersubband Transition-Based Processes and Devices in...

Proceedings of the IEEE 2010 Vol. 98; Iss. 7

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

Hofstetter, D., Baumann, E., Giorgetta, F.R., Théron, R., Hong Wu, Schaff, W.J., Dawlaty, J., George, P.A., Eastman, L.F., Rana, F., Kandaswamy, P.K., Guillot, F., Monroy, E.
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Volume:
98
Year:
2010
Language:
english
Pages:
15
DOI:
10.1109/jproc.2009.2035465
File:
PDF, 1.44 MB
english, 2010
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