A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With...

IEEE Journal of Solid-State Circuits 2012 Vol. 47; Iss. 1

A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With 0.7 V Operation Enabled by Stability, Write-Ability and Read-Ability Enhancements

Pilo, H., Arsovski, I., Batson, K., Braceras, G., Gabric, J., Houle, R., Lamphier, S., Radens, C., Seferagic, A.
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Volume:
47
Year:
2012
Language:
english
Pages:
10
DOI:
10.1109/jssc.2011.2164730
File:
PDF, 2.84 MB
english, 2012
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