Dislocation related issues in the degradation of GaN-based...

IEEE Journal of Selected Topics in Quantum Electronics 2004 Vol. 10; Iss. 6

Dislocation related issues in the degradation of GaN-based laser diodes

Tomiya, S., Hino, T., Goto, S., Takeya, M., Ikeda, M.
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Volume:
10
Year:
2004
Language:
english
Pages:
10
DOI:
10.1109/jstqe.2004.837735
File:
PDF, 3.53 MB
english, 2004
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