Lasing at 1.28 μm of InAs-GaAs quantum dots with AlGaAs...

IEEE Journal of Selected Topics in Quantum Electronics 2005 Vol. 11; Iss. 5

Lasing at 1.28 μm of InAs-GaAs quantum dots with AlGaAs cladding layer grown by metal-organic chemical vapor deposition

Tatebayashi, J., Ishida, M., Hatori, N., Ebe, H., Sudou, H., Kuramata, A., Sugawara, M., Arakawa, Y.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
11
Year:
2005
Language:
english
Pages:
8
DOI:
10.1109/jstqe.2005.853788
File:
PDF, 308 KB
english, 2005
Conversion to is in progress
Conversion to is failed