Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

IEEE Journal of Selected Topics in Quantum Electronics 2011 Vol. 17; Iss. 4

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Geelhaar, L., Chèze, C., Jenichen, B., Brandt, O., Pfüller, C., Münch, S., Rothemund, R., Reitzenstein, S., Forchel, A., Kehagias, T., Komninou, P., Dimitrakopulos, G.P., Karakostas, T., Lari, L.,
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Volume:
17
Year:
2011
Language:
english
Pages:
11
DOI:
10.1109/jstqe.2010.2098396
File:
PDF, 1.33 MB
english, 2011
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