Fast-Switching GaN-Based Lateral Power Schottky Barrier...

IEEE Electron Device Letters 2012 Vol. 33; Iss. 3

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Bahat-Treidel, E., Hilt, O., Zhytnytska, R., Wentzel, A., Meliani, C., Wurfl, J., Trankle, G.
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Volume:
33
Year:
2012
Language:
english
Pages:
3
DOI:
10.1109/led.2011.2179281
File:
PDF, 757 KB
english, 2012
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