Electron and hole mobilities in inversion layers on...

Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces

Leistiko, O., Jr., Grove, A.S., Sah, C.T.
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Volume:
12
Year:
1965
Language:
english
Pages:
7
DOI:
10.1109/t-ed.1965.15489
File:
PDF, 761 KB
english, 1965
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