Conductance of ion-implanted buried-channel MOS transistors

IEEE Transactions on Electron Devices 1976 Vol. 23; Iss. 12

Conductance of ion-implanted buried-channel MOS transistors

Schemmert, W., Gabler, L., Hoefflinger, B.
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Volume:
23
Year:
1976
Language:
english
Pages:
7
DOI:
10.1109/t-ed.1976.18655
File:
PDF, 684 KB
english, 1976
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