Lifetime in ion implant damage gettered silicon by MOS...

IEEE Transactions on Electron Devices 1979 Vol. 26; Iss. 3

Lifetime in ion implant damage gettered silicon by MOS voltage ramping

Nassibian, A.G., Golja, B.
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Volume:
26
Year:
1979
Language:
english
Pages:
2
DOI:
10.1109/t-ed.1979.19418
File:
PDF, 242 KB
english, 1979
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