1 µm MOSFET VLSI technology: Part VI—Electron-beam...

IEEE Transactions on Electron Devices 1979 Vol. 26; Iss. 4

1 µm MOSFET VLSI technology: Part VI—Electron-beam lithography

Grobman, W.D., Luhn, H.E., Donohue, T.P., Speth, A.J., Wilson, A., Hatzakis, M., Chang, T.H.P.
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Volume:
26
Year:
1979
Language:
english
Pages:
9
DOI:
10.1109/t-ed.1979.19435
File:
PDF, 1.91 MB
english, 1979
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