TP-B3 uniformly low-threshold diode lasers at 1.5-1.55 µm from VPE In1-xGaxAsyP1-ymaterial
Johnston, W.D., Jr., Strege, K.E.Volume:
27
Year:
1980
Language:
english
Pages:
1
DOI:
10.1109/t-ed.1980.20217
File:
PDF, 152 KB
english, 1980