Threshold shifting of NMOS transistors by arsenic ion...

IEEE Transactions on Electron Devices 1981 Vol. 28; Iss. 10

Threshold shifting of NMOS transistors by arsenic ion implantation prior to gate oxidation

Pereira de Souza, J., Charry, E.
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Volume:
28
Year:
1981
Language:
english
Pages:
3
DOI:
10.1109/t-ed.1981.20506
File:
PDF, 295 KB
english, 1981
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