Simulation of the novel high-frequency FET with an opposed...

IEEE Transactions on Electron Devices 1983 Vol. 30; Iss. 9

Simulation of the novel high-frequency FET with an opposed gate-source structure

Krusius, J.P., Berenz, J.J.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
30
Year:
1983
Language:
english
Pages:
8
DOI:
10.1109/t-ed.1983.21267
File:
PDF, 749 KB
english, 1983
Conversion to is in progress
Conversion to is failed