The insulated gate transistor: A new three-terminal...

IEEE Transactions on Electron Devices 1984 Vol. 31; Iss. 6

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

Baliga, B.J., Adler, M.S., Love, R.P., Gray, P.V., Zommer, N.D.
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Volume:
31
Year:
1984
Language:
english
Pages:
8
DOI:
10.1109/t-ed.1984.21614
File:
PDF, 732 KB
english, 1984
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