VB-5 comparison of accumulation and inversion mode LPCVD...

VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications

Banerjee, S.K., Elahy, M., Shichijo, H., Pollack, G.P., Richardson, W.F., Malhi, S.D.S., Shah, A.H., Chatterjee, P.K., Lam, H.W., Womack, R.H.

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Volume:

Year:

1984

Language:

english

Pages:

DOI:

10.1109/t-ed.1984.21881

File:

PDF, 161 KB

english, 1984

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