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VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications
Banerjee, S.K., Elahy, M., Shichijo, H., Pollack, G.P., Richardson, W.F., Malhi, S.D.S., Shah, A.H., Chatterjee, P.K., Lam, H.W., Womack, R.H.Volume:
31
Year:
1984
Language:
english
Pages:
1
DOI:
10.1109/t-ed.1984.21881
File:
PDF, 161 KB
english, 1984