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IIA-3 cryogenic noise performance of quarter-micrometer gate-length high-electron-mobility transistors
Chao, P.C., Smith, P.M., Mishra, U.K., Palmateer, S.C., Hwang, J.C.M., Pospieszalski, M., Brooks, T., Weinreb, S.Volume:
32
Year:
1985
Language:
english
Pages:
1
DOI:
10.1109/t-ed.1985.22309
File:
PDF, 170 KB
english, 1985