A novel GaAs Schottky-drain power FET for microwave...

IEEE Transactions on Electron Devices 1985 Vol. 32; Iss. 12

A novel GaAs Schottky-drain power FET for microwave application

Calviello, J.A., Bie, P.R., Pomian, R.J., Cappello, A.
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Volume:
32
Year:
1985
Language:
english
Pages:
4
DOI:
10.1109/t-ed.1985.22425
File:
PDF, 631 KB
english, 1985
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