In situ arsenic-doped polysilicon for VLSI applications

IEEE Transactions on Electron Devices 1986 Vol. 33; Iss. 10

In situ arsenic-doped polysilicon for VLSI applications

Arienzo, M., Megdanis, A.C., Sackles, P.E., Michel, A.E.
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Volume:
33
Year:
1986
Language:
english
Pages:
4
DOI:
10.1109/t-ed.1986.22704
File:
PDF, 535 KB
english, 1986
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