A new integrated silicon gate technology combining bipolar...

IEEE Transactions on Electron Devices 1986 Vol. 33; Iss. 12

A new integrated silicon gate technology combining bipolar linear, CMOS logic, and DMOS power parts

Andreini, A., Contiero, C., Galbiati, P.
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Volume:
33
Year:
1986
Language:
english
Pages:
6
DOI:
10.1109/t-ed.1986.22862
File:
PDF, 1.12 MB
english, 1986
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