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Mo- and Ti-silicided low-resistance shallow junctions formed using the ion implantation through metal technique
Nagasawa, E., Okabayashi, H., Morimoto, M.Volume:
34
Year:
1987
Language:
english
Pages:
6
DOI:
10.1109/t-ed.1987.22966
File:
PDF, 771 KB
english, 1987