VB-6 continuous room-temperature laser operation of...

IEEE Transactions on Electron Devices 1987 Vol. 34; Iss. 11

VB-6 continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si

Deppe, D.G., Holonyak, N., Jr., Nam, D.W., Hsieh, K.C., Kaliski, R.W., Matyi, R.J., Lee, J.W., Shichijo, H., Epler, J.E., Burnham, R.D., Chung, H.F., Paoli, T.L.
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Volume:
34
Year:
1987
Language:
english
Pages:
1
DOI:
10.1109/t-ed.1987.23306
File:
PDF, 163 KB
english, 1987
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