Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia
Tanaka, M., Saida, S., Mizushima, I., Inoue, F., Kojima, M., Tanaka, T., Nakanishi, T., Suguro, K., Tsunashima, Y.Volume:
49
Year:
2002
Language:
english
Pages:
6
DOI:
10.1109/ted.2002.802630
File:
PDF, 273 KB
english, 2002