Suppression of SiN-induced boron penetration by using...

Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia

Tanaka, M., Saida, S., Mizushima, I., Inoue, F., Kojima, M., Tanaka, T., Nakanishi, T., Suguro, K., Tsunashima, Y.
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Volume:
49
Year:
2002
Language:
english
Pages:
6
DOI:
10.1109/ted.2002.802630
File:
PDF, 273 KB
english, 2002
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