An analysis of the anomalous dip in scattering parameter...

IEEE Transactions on Electron Devices 2002 Vol. 49; Iss. 10

An analysis of the anomalous dip in scattering parameter S22 of InGaP-GaAs heterojunction bipolar transistors (HBTs)

Hsing-Yuan Tu, Yo-Sheng Lin, Ping-Yu Chen, Shey-Shi Lu, Hsuan-Yu Pan
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
49
Year:
2002
Language:
english
Pages:
3
DOI:
10.1109/ted.2002.802658
File:
PDF, 231 KB
english, 2002
Conversion to is in progress
Conversion to is failed