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Impact of gate-to-contact spacing on ESD performance of salicided deep submicron NMOS transistors
Kwang-Hoon Oh, Duvvury, C., Banerjee, K., Dutton, R.W.Volume:
49
Year:
2002
Language:
english
Pages:
10
DOI:
10.1109/ted.2002.803627
File:
PDF, 1.03 MB
english, 2002