The 1/f1.7 noise in submicron SOI MOSFETs with 2.5 nm nitrided gate oxide
Lukyanchikova, N., Petrichuk, M., Garbar, N., Simoen, E., Mercha, A., Claeys, C., van Meer, H., De Meyer, K.Volume:
49
Year:
2002
Language:
english
Pages:
4
DOI:
10.1109/ted.2002.807448
File:
PDF, 400 KB
english, 2002