Effect of dislocations on the zero-bias resistance-area...

Effect of dislocations on the zero-bias resistance-area product, quantum efficiency, and spectral response of LWIR HgCdTe photovoltaic detectors

Gopal, V., Gupta, S.
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Volume:
50
Year:
2003
Language:
english
Pages:
7
DOI:
10.1109/ted.2003.813230
File:
PDF, 495 KB
english, 2003
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