Statistical simulation of leakage currents in MOS and flash...

Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model

Larcher, L.
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Volume:
50
Year:
2003
Language:
english
Pages:
8
DOI:
10.1109/ted.2003.813236
File:
PDF, 550 KB
english, 2003
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