Charge trapping and dielectric reliability of SiO2-Al2O3...

IEEE Transactions on Electron Devices 2003 Vol. 50; Iss. 5

Charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes

Kerber, A., Cartier, E., Degraeve, R., Roussel, P.J., Pantisano, L., Kauerauf, T., Groeseneken, G., Maes, H.E., Schwalke, U.
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Volume:
50
Year:
2003
Language:
english
Pages:
9
DOI:
10.1109/ted.2003.813486
File:
PDF, 695 KB
english, 2003
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