Characteristics of low-leakage deep-trench diode for ESD...

IEEE Transactions on Electron Devices 2003 Vol. 50; Iss. 7

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-μm SiGe BiCMOS process

Shiao-Shien Chen, Tung-Yang Chen, Tien-Hao Tang, Jin-Lian Su, Tzer-Min Shen, Jen-Kon Chen
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Volume:
50
Year:
2003
Language:
english
Pages:
7
DOI:
10.1109/ted.2003.814971
File:
PDF, 604 KB
english, 2003
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