High breakdown voltage AlGaN-GaN power-HEMT design and high...

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I., Ogura, T., Ohashi, H.
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Volume:
50
Year:
2003
Language:
english
Pages:
4
DOI:
10.1109/ted.2003.819248
File:
PDF, 333 KB
english, 2003
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