The influence of emitter material on silicon nitride...

IEEE Transactions on Electron Devices 2004 Vol. 51; Iss. 1

The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs

Hong Wang, Hong Yang, Radhakrishnan, K., Tien Khee Ng, Wai Chye Cheong
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Volume:
51
Year:
2004
Language:
english
Pages:
6
DOI:
10.1109/ted.2003.821381
File:
PDF, 361 KB
english, 2004
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