Characterization of 1.9- and 1.4-nm ultrathin gate...

IEEE Transactions on Electron Devices 2004 Vol. 51; Iss. 1

Characterization of 1.9- and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate

Qiuxia Xu, He Qian, Zhensheng Han, Gang Lin, Ming Liu, Baoqing Chen, Chuanfeng Zhu, Dexin Wu
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Volume:
51
Year:
2004
Language:
english
Pages:
8
DOI:
10.1109/ted.2003.821389
File:
PDF, 523 KB
english, 2004
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