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The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode
Chang Seok Kang, Hag-Ju Cho, Rino Choi, Young-Hee Kim, Chang Yong Kang, Se Jong Rhee, Changhwan Choi, Akbar, M.S., Lee, J.C.Volume:
51
Year:
2004
Language:
english
Pages:
8
DOI:
10.1109/ted.2003.821707
File:
PDF, 433 KB
english, 2004