Improvement of dark current using InP/InGaAsP transition...

Improvement of dark current using InP/InGaAsP transition layer in large-area InGaAs MSM photodetectors

Junghwan Kim, Johnson, W.B., Kanakaraju, S., Calhoun, L.C., Lee, C.H.
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Volume:
51
Year:
2004
Language:
english
Pages:
6
DOI:
10.1109/ted.2003.822276
File:
PDF, 283 KB
english, 2004
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