4.5-kV injection-enhanced gate transistors (IEGTs) with high turn-off ruggedness
Ogura, T., Ninomiya, H., Sugiyama, K., Inoue, T.Volume:
51
Year:
2004
Language:
english
Pages:
6
DOI:
10.1109/ted.2004.825111
File:
PDF, 367 KB
english, 2004