RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
Shi-Jin Ding, Hang Hu, Chunxiang Zhu, Sun Jung Kim, Xiongfei Yu, Ming-Fu Li, Byung Jin Cho, Chan, D.S.H., Yu, M.B., Rustagi, S.C., Chin, A., Dim-Lee KwongVolume:
51
Year:
2004
Language:
english
Pages:
9
DOI:
10.1109/ted.2004.827367
File:
PDF, 422 KB
english, 2004