Realizing high-voltage junction isolated LDMOS transistors...

IEEE Transactions on Electron Devices 2004 Vol. 51; Iss. 12

Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping

Hardikar, S., Tadikonda, R., Green, D.W., Vershinin, K.V., Narayanan, E.M.S.
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Volume:
51
Year:
2004
Language:
english
Pages:
6
DOI:
10.1109/ted.2004.839104
File:
PDF, 709 KB
english, 2004
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