Characteristics of InxAl1-xN-GaN high-electron mobility...

IEEE Transactions on Electron Devices 2005 Vol. 52; Iss. 2

Characteristics of InxAl1-xN-GaN high-electron mobility field-effect transistor

Katz, O., Mistele, D., Meyler, B., Bahir, G., Salzman, J.
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Volume:
52
Year:
2005
Language:
english
Pages:
5
DOI:
10.1109/ted.2004.841281
File:
PDF, 522 KB
english, 2005
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