Physics-based single-piece charge model for strained-Si...

IEEE Transactions on Electron Devices 2005 Vol. 52; Iss. 7

Physics-based single-piece charge model for strained-Si MOSFETs

Chandrasekaran, K., Xing Zhou, Chiah, S.B., Shangguan, W., Guan Huei See
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Volume:
52
Year:
2005
Language:
english
Pages:
8
DOI:
10.1109/ted.2005.850611
File:
PDF, 566 KB
english, 2005
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