A novel transient characterization technique to investigate...

IEEE Transactions on Electron Devices 2006 Vol. 53; Iss. 5

A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient

Tahui Wang, Chien-Tai Chan, Chun-Jung Tang, Ching-Wei Tsai, Wang, H.C.-H., Min-Hwa Chi, Tang, D.D.
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Volume:
53
Year:
2006
Language:
english
Pages:
7
DOI:
10.1109/ted.2006.871849
File:
PDF, 320 KB
english, 2006
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