Physically based quantum-mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT ∼ 1 nm) SiO2 and high-κ gate stacks
Fei Li, Mudanai, S.P., Yang-Yu Fan, Register, L.F., Banerjee, S.K.Volume:
53
Year:
2006
Language:
english
Pages:
11
DOI:
10.1109/ted.2006.871877
File:
PDF, 429 KB
english, 2006