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High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments
Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., Saraswat, K.C.Volume:
53
Year:
2006
Language:
english
Pages:
10
DOI:
10.1109/ted.2006.872362
File:
PDF, 918 KB
english, 2006