Investigation of transient relaxation under static and...

IEEE Transactions on Electron Devices 2006 Vol. 53; Iss. 5

Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides

Akbar, M.S., Changhwan Choi, Se Jong Rhee, Krishnan, S.A., Chang Yong Kang, Man Hong Zhang, Tackhwi Lee, Ok, I., Feng Zhu, Hyoung-Sub Kim, Lee, J.C.
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Volume:
53
Year:
2006
Language:
english
Pages:
8
DOI:
10.1109/ted.2006.872886
File:
PDF, 607 KB
english, 2006
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