Analysis of lateral IGBT with a variation in lateral doping...

IEEE Transactions on Electron Devices 2006 Vol. 53; Iss. 7

Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology

Tadikonda, R., Hardikar, S., Green, D.W., Sweet, M., Narayanan, E.M.S.
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Volume:
53
Year:
2006
Language:
english
Pages:
5
DOI:
10.1109/ted.2006.876276
File:
PDF, 226 KB
english, 2006
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