Scalability of the Si/sub 1-x/Ge/sub x/ source/drain...

IEEE Transactions on Electron Devices 2006 Vol. 53; Iss. 7

Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

Eneman, G., Verheyen, P., Rooyackers, R., Nouri, F., Washington, L., Schreutelkamp, R., Moroz, V., Smith, L., An De Keersgieter, Jurczak, M., Kristin De Meyer
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Volume:
53
Year:
2006
Language:
english
Pages:
10
DOI:
10.1109/ted.2006.876390
File:
PDF, 609 KB
english, 2006
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