50-nm Self-Aligned and “Standard” T-gate InP pHEMT...

IEEE Transactions on Electron Devices 2006 Vol. 53; Iss. 12

50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node

David A. J. Moran, Helen McLelland, Khaled Elgaid, Griogair Whyte, Colin R. Stanley, Iain Thayne
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Volume:
53
Year:
2006
Language:
english
Pages:
6
DOI:
10.1109/ted.2006.885674
File:
PDF, 499 KB
english, 2006
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